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| FQB60N03L Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level PWM Optimized Power MOSFET | |||
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October 2002
FQB60N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
⢠DC/DC converters
Features
⢠Fast switching
⢠rDS(ON) = 0.010⦠(Typ), VGS = 10V
⢠rDS(ON) = 0.017⦠(Typ), VGS = 5V
⢠Qg (Typ) = 13nC, VGS = 5V
⢠Qgd (Typ) = 4.5nC
⢠CISS (Typ) = 1650pF
DRAIN
D
(FLANGE)
GATE
G
SOURCE
TO-263AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FQB60N03L
Device
FQB60N03L
Package
TO-263AB
Reel Size
330mm
S
Ratings
30
±16
51
27
7
Figure 4
62
0.5
-55 to 150
2
62
43
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
FQB60N03L Rev. B
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