FQB4N90TM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQB4N90 / FQI4N90
N-Channel QFET MOSFET
900 V, 4.2 A, 3.3 Ω
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 4.2 A, 900 V, R_DS(on) = 3.3 Ω (Max) @V_GS = 10 V,
I_D = 2.1 A
• Low Gate Charge (Typ. 24 nC)
• Low Crss (Typ. 9.5 pF)
• 100% Avalanche Tested
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_stg
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQB4N90 / FQI4N90 Rev. C0
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FQB4N90 / FQI4N90
900
4.2
2.65
16.8
± 30
570
4.2
14
4.0
3.13
140
1.12
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V
W
W
W/°C
°C
°C
Typ
Max
Units
--
0.89
°C/W
--
40
°C/W
--
62.5
°C/W
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