FQB33N10_13 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQB33N10 / FQI33N10
N-Channel QFET MOSFET
100 V, 33 A, 52 mΩ
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 33 A, 100 V, R_DS(on) = 52 mΩ (Max) @V_GS = 10 V,
I_D = 16.5 A
• Low Gate Charge (Typ. 38 nC)
• Low Crss (Typ. 62 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings

T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
from case for 5 seconds
D
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FQB33N10 / FQI33N10
100
33
23
132
±
25
435
33
12.7
6.0
3.75
127
0.85
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient *
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Unit
--
1.18
°CW
--
40
°CW
--
62.5
°CW
©2000 Fairchild Semiconductor Corporation
FQB33N10 / FQI33N10 Rev. C0
www.fairchildsemi.com