FQB33N10_04 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET

FQB33N10 / FQI33N10
100V N-Channel MOSFET
April 2000
QFET^TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 33A, 100V, R_DS(on) = 0.052Ω @V_GS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching.
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
D
!
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings

T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
from case for 5 seconds
!"
G!
!
S
FQB33N10 / FQI33N10
100
33
23
132
±
25
435
33
12.7
6.0
3.75
127
0.85
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient *
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on he minimum pad size recommended (PCB Mount)
Typ
Max
Units
--
1.18
°CW
--
40
°CW
--
62.5
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000