FQB33N10LTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQB33N10L
N-Channel QFET^® MOSFET
100 V, 33 A, 52 mΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• 33 A, 100 V, R_DS(on) = 52 mΩ (Max) @V_GS = 10 V,
I_D = 16.5 A
• Low Gate Charge (Typ. 30 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
D
GS
D²-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQB33N10LTM
100
33
23
132
± 20
430
33
12.7
6.0
3.75
127
0.85
-55 to +175
300
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (* 1 in² pad of 2 oz copper), Max.
FQB33N10LTM
1.18
62.5
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FQB33N10L Rev. C1
www.fairchildsemi.com