FQB25N33TM Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 330V N-Channel MOSFET

FQB25N33TM_F085
330V N-Channel MOSFET
Features
• 25A, 330V, R_DS(on) = 0.23Ω @V_GS = 10V
• Low gate charge (typical 58nC)
• Low Crss (typical 40pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
April 2010
tm
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
Drain Current
- Pulsed
Gate -Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25^oC) *
Power Dissipation (T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
T_L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
1
FQB25N33TM_F085 Rev. A
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Ratings
330
25
16.0
100
±30
370
25
37
4.5
3.1
250
2.0
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/^oC
o_C
o_C
Ratings
0.5
40
62.5
Units
o_C/W
o_C/W
o_C/W
www.fairchildsemi.com