FQB19N20_13 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

April 2013
FQB19N20 / FQI19N20
N-Channel QFET^® MOSFET
200 V, 19.4 A, 150 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 19.4 A, 200 V, R_DS(on) = 150 mΩ (Max.) @ V_GS = 10 V,
I_D = 9.7 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS Compliant
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©2008 Fairchild Semiconductor Corporation
FQB19N20 / FQI19N20 Rev. C0
www.fairchildsemi.com