FQB16N25C Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 250V N-Channel MOSFET

FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
• 15.6A, 250V, R_DS(on) = 0.27 Ω @V_GS = 10 V
• Low gate charge ( typical 41nC)
• Low Crss ( typical 68pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
June 2006
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C)*
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
G
S
FQB16N25C / FQI16N25C
250
15.6
9.8
62.4
± 30
410
15.6
13.9
5.5
3.13
139
1.11
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
FQB16N25C / FQI16N25C
0.9
40
62.5
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FQB16N25C/FQI16N25C Rev. A1
www.fairchildsemi.com