FQB12N60CTM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FQB12N60C / FQI12N60C
600V N-Channel MOSFET
Features
• 12A, 600V, R_DS(on) = 0.65Ω @V_GS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
September 2007
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
1
FQB12N60C / FQI12N60C Rev. A
G
S
FQB12N60C/FQI12N60C
600
12
7.4
48
± 30
870
12
22.5
4.5
3.13
225
1.78
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
--
--
--
Max
0.56
40
62.5
Units
°C/W
°C/W
°C/W
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