FQB11P06_04 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET

FQB11P06 / FQI11P06
60V P-Channel MOSFET
QFET^®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -11.4A, -60V, R_DS(on) = 0.175Ω @V_GS = -10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
S
!
●
●
▶▲
●
!
D
FQB11P06 / FQI11P06
-60
-11.4
-8.05
-45.6
± 25
160
-11.4
5.3
-7.0
3.13
53
0.35
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient *
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
--
2.85
°C/W
--
40
°C/W
--
62.5
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B5, March 2004