FQB11N40CTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

FQB11N40C
N-Channel QFET^® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power
factor correction, electronic lamp ballasts based on half
bridge topology.
Features
• 10.5 A, 400V, R_DS(on) = 530 mΩ (Max.) @ V_GS = 10 V,
I_D = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
D
D
G
G
S
D²-PAK
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FQB11N40CTM
400
10.5
6.6
42
± 30
360
11
13.5
4.5
135
1.07
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
FQB11N40CTM
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² pad of 2 oz copper), Max.
0.93
62.5
40
Unit
o_C/W
©2004 Fairchild Semiconductor Corporation
1
FQB11N40C Rev. C0
www.fairchildsemi.com