FQB10N50CFTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFETR FRFETR MOSFET500 V, 10 A, 610 m

FQB10N50CF
N-Channel QFET^® FRFET^® MOSFET
500 V, 10 A, 610 m
October 2013
Features
• 10 A, 500 V, R_DS(on) = 610 mΩ (Max.) @ V_GS = 10 V, I_D = 5 A
• Low gate charge ( Typ. 45 nC)
• Low Crss ( Typ. 17.5 pF)
• 100% avalanche tested
• Fast recovery body diode
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
D
G
S
D²-PAK
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
Continuous
Continuous
(T_C
(T_C
=
=
25^oC)
100^oC)
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB10N50CFTM_WS
500
±30
10
6.35
40
825
10
14.3
2.0
143
1.14
-55 to +150
300
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in² pad of 2 oz copper), Max.
FQB10N50CFTM_WS
0.87
62.5
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FQB10N50CF Rev. C0
www.fairchildsemi.com