FQA8N90C-F109 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω

FQA8N90C_F109
N-Channel QFET® MOSFET
900 V, 8 A, 1.9 Ω
Features
• 8 A, 900 V, R_DS(on) = 1.9 Ω (Max.) @ V_GS = 10 V, I_D = 4 V
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
• RoHS Compliant
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N90C_F109
900
8.0
5.1
32
± 30
850
8.0
24
4.0
240
1.92
-55 to +150
300
FQA8N90C_F109
0.52
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FQA8N90C_F109 Rev C1
www.fairchildsemi.com