FQA10N80C-F109 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω

FQA10N80C_F109
N-Channel QFET^® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, R_DS(on) = 1.1 Ω (Max.) @ V_GS = 10 V, I_D = 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
G
D
S
TO-3PN
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA10N80C_F109
800
10
6.32
40
± 30
920
10
24
4.0
240
1.92
-55 to +150
300
FQA10N80C_F109
0.52
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
o_C/W
o_C/W
©2006 Fairchild Semiconductor Corporation
1
FQA10N80C_F109 Rev. C1
www.fairchildsemi.com