FPNH10 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN RF Transistor

FPNH10
C
BE
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
25
V_CBO
Collector-Base Voltage
30
V_EBO
Emitter-Base Voltage
3.0
I_C
Collector Current - Continuous
50
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
FPNH10
350
2.8
125
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
2000 Fairchild Semiconductor Corporation
FPNH10 Rev. A