FPN660 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

FPN660/FPN660A
PNP Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process PA.
CBE
TO-226
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
FPN660
V_CEO
Collector-Emitter Voltage
60
V_CBO
Collector-Base Voltage
80
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current
- Continuous
3
T_J, T_STG Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
FPN660A
60
60
5
3
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Units
V
V
V
A
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV_CEO
Collector-Emitter Breakdown Voltage
I_C = 10mA, I_B = 0
55
V
BV_CBO
Collector-Base Breakdown Voltage
I_E = 100µA, I_E = 0 FPN660
80
V
FPN660A
60
V
BV_EBO
Emitter-Base Breakdown Voltage
I_E = 100µA, I_C = 0
5.0
I_CBO
Collector-Base Cutoff Current
V_CB = 30V, I_E = 0
V_CB = 30V, I_E = 0, T_A = 100°C
I_EBO
Emitter-Base Cutoff Current
V_EB = 4.0V, I_C = 0
On Characteristics *
V
100 nA
10 µA
100 nA
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
I_C = 100mA, V_CE = 2.0V
70
I_C = 500mA, V_CE = 2.0V FPN660
100
FPN660A 250
I_C = 1.0A, V_CE = 2.0V
80
I_C = 2.0A, V_CE = 2.0V
40
I_C = 1.0A, I_B = 100mA
I_C = 2.0A, I_B = 200mA
FPN660
FPN660A
300
550
300 mV
450 mV
400 mV
V_BE(sat) Base-Emitter Saturation Voltage
V_BE(on)
Base-Emitter On Voltage
Small Signal Characteristics
I_C = 1.0A, I_B = 100mA
I_C = 1.0A, V_CE = 2.0V
1.25 V
1.0
V
C_obo
f_T
Output Capacitance
Transition Frequency
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CB = 10V, I_E = 0, f = 1MHz
I_C = 100mA, V_CE = 5.0V,
f = 100MHz
45 pF
75
MHz
NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002