FPN630 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Low Saturation Transistor

FPN630
FPN630A
C
BE
TO-226
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process PC.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
35
5.0
3.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
FPN630 / FPN630A
1.0
50
125
Units
V
V
V
A
°C
Units
W
°C/W
°C/W
 1999 Fairchild Semiconductor Corporation