FPN560 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Low Saturation Transistor

FPN560
FPN560A
C
BE
TO-226
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
80
5.0
3.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
FPN560 / FPN560A
1.0
50
125
Units
V
V
V
A
°C
Units
W
°C/W
°C/W
 1999 Fairchild Semiconductor Corporation