FODM8801AR2 Datasheet, PDF (1/14 Pages) Fairchild Semiconductor – FODM8801A, FODM8801B, FODM8801C OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package

April 2013
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
■ Utilizing Proprietary Process Technology to Achieve
High Operating Temperature: up to 125°C
■ Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, I_F
■ High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VAC_RMS for 1 minute and
DIN EN/IEC60747-5-5
■ Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
■ > 5mm Creepage and Clearance Distance
■ Applicable to Infrared Ray Reflow, 245°C
Applications
■ Primarily Suited for DC-DC Converters
■ Ground-Loop Isolation, Signal-Noise Isolation
■ Communications – Adapters, Chargers
■ Consumer – Appliances, Set-Top Boxes
■ Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor, utilizing Fairchild’s leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, V_ISO, is rated at 3750 VAC_RMS.
Schematic
Package
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 1. Schematic
Figure 2. Half-Pitch Mini-Flat
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com