FMMT449 Datasheet, PDF (1/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT449
C
E
B
SuperSOT^TM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous. Sourced from Process NB.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FMMT449
V_CEO
Collector-Emitter Voltage
30
V_CBO
Collector-Base Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current - Continuous
- Peak Pulse Current
1
2
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation*
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in² of 2oz copper.
© 1998Fairchild Semiconducto Corporation
Page 1 of 2
Max
FMMT449
500
4
250
Units
mW
mW/°C
°C/W
fmmt449.lwpPrNB revA