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| FMMT38CTA Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |||
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FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 â AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS â
FMMT38A â 4J
FMMT38B â 5J
FMMT38C â 7J
ABSOLUTE MAXIMUM RATINGS.
FMMT38A
FMMT38B
FMMT38C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
800
mA
Continuous Collector Current
IC
300
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V
IC=10A, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V
IE=10A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100
nA
1.25
V
VEB=8V, IC=0
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE
FMMT38B
500
1000
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38C
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 100
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