FMG1G50US60L Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Molding Type Module

FMG1G50US60L
Molding Type Module
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short Circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.2 V @ I_C = 50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
Package Code : 7PM-GA
E1/C2
C1
E2
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
T_SC
P_D
T_J
T_stg
V_iso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
FMG1G50US60L
600
± 20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
©2002 Fairchild Semiconductor Corporation
FMG1G50US60L Rev. A