FMBM5551 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
April 2005
C2
E1
C1
B2
E2
pin #1 ^B1
SuperSOT^TM-6
Mark: .3S2
Dot denotes pin #1
Absolute Maximum Ratings *
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J
T_STG
T_θJA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T_C = 25°C)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW
160
180
6
600
0.7
150
-55 ~ 150
180
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics
h_FE1
DIVID1
h_FE2
DIVID2
DC Current Gain
Variation Ratio of h_FE1 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h_FE2 Between Die 1 and Die 2
I_C = 1mA, I_B = 0
I_C = 100µA, I_E = 0
I_C = 10µA, I_C = 0
V_CB = 120V
V_CB = 120V, T_a = 100°C
V_EB = 4V
V_CE = 5V, I_C = 1mA
h_FE1(Die1)/h_FE1(Die2)
V_CE = 5V, I_C = 10mA
h_FE2(Die1)/h_FE2(Die2)
Units
V
V
V
mA
W
°C
°C
°C/W
Min. Max Units
160
V
180
V
6
V
50
nA
50
µA
50
nA
80
0.9
1.1
80
250
0.95
1.05
©2005 Fairchild Semiconductor Corporation
1
FMBM5551 Rev. D
www.fairchildsemi.com