FMBM5401 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

FMBM5401
PNP General Purpose Amplifier
• This device has matched dies in SuperSOT-6.
C2
E1
C1
B2
E2
pin #1 ^B1
SuperSOT^TM-6
Mark: .4S2
Absolute Maximum Ratings*
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
-150
-160
-5.0
-600
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics*
I_C = -1.0mA, I_B = 0
I_C = -100µA, I_E = 0
I_C = -10µA, I_C = 0
V_CB = -120V, I_E = 0
V_CB = -120V, I_E = 0, T_a = 100°C
V_EB = -3.0V, I_C = 0
h_FE1
DIVID1
h_FE2
DIVID2
h_FE3
DIVID3
DC Current Gain
Variation Ratio of h_FE1 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h_FE2 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h_FE3 Between Die 1 and Die 2
V_CE = -5V, I_C = -1mA
h_FE1(Die1)/h_FE1(Die2)
V_CE = -5V, I_C = -10mA
h_FE2(Die1)/h_FE2(Die2)
V_CE = -5V, I_C = -50mA
h_FE3(Die1)/h_FE3(Die2)
Units
V
V
V
mA
°C
Min. Max Units
-150
V
-160
V
-5.0
V
-50
nA
-50
µA
-50
nA
50
0.9
1.1
60
240
0.95
1.05
50
0.9
1.1
©2005 Fairchild Semiconductor Corporation
1
FMBM5401 Rev. A
www.fairchildsemi.com