FMBA0656 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package

SigDniaslcrTeet&cehPnoowloegries
FMBA0656
C2
E1
C1
B2
E2
B1
Package: SuperSOT-6
Device Marking: .003
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current (continuous)
P_D
Power Dissipation @Ta = 25°C*
T_STG
T_J
Storage Temperature Range
Junction Temperature
R_θJA
Thermal Resistance, Junction to Ambient
*Pd total, for both transistors. For each transistor, Pd = 350mW.
Value
80
80
4
500
0.7
-55 to +150
150
180
Units
V
V
V
mA
W
°C
°C
°C/W
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
BV_CEO
BV_CBO
BV_EBO
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
© 1997 Fairchild Semiconductor Corporation
Test Conditions
Ic = 1.0 mA
Ic = 100 uA
Ie = 100 uA
Page 1 of 2
Min Max Units
80
V
80
V
4
V
fmba0656.lwpPr33&73(Y3)