FMBA06 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Multi-Chip General Purpose Amplifier

Discrete POWER & Signal
Technologies
FMBA06
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
80
V_CBO
Collector-Base Voltage
80
V_EBO
Emitter-Base Voltage
4.0
I_C
Collector Current - Continuous
500
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
FMBA06
700
5.6
180
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation