FMB857B Datasheet, PDF (1/2 Pages) Samsung semiconductor – 256Mb F-die DDR SDRAM Specification

FMB857B
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process 68.
C2
E1
C1
September 2007
B2
pin #1
E2
B1
SSOT-6
Mark: .N2
Dot denotes pin #1
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
T_J, T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Value
50
45
5
500
-55 ~ 150
Units
V
V
V
mA
°C
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Max.
700
5.6
180
Units
mW
mW/°C
°C/W
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
BV_CEX
I_CBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Voltage
Collector Cut-off Current
I_C = 10μA
I_C = 1mA
I_E = 10μA
I_C = 10μA, V_BE = 1V
V_CB = 30V, T = 25°C
T =150°C
h_FE
V_CE(sat)
V_BE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V_CE = 5V, I_C = 2mA
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
V_CE = 5V, I_C = 2mA
V_CE = 5V, I_C = 10mA
NOTES: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Min.
50
45
5
50
220
0.6
Typ.
Max.
15
4000
475
0.3
0.65
0.75
0.82
Units
V
V
V
nA
nA
V
V
© 2007 Fairchild Semiconductor Corporation
FMB857B Rev. 1.0.0
1
www.fairchildsemi.com