FMB5551_04 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package

FMB5551
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
• This device is designed for general purpose high voltage amplifiers
and gas discharge display driving.
• Sourced from process 16.
• See MMBT5551 for characteristics.
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
P_C
Collector Dissipation (T_a=25°C) *
T_J
Junction Temperature
T_STG
Storage Temperature Range
R_θJA
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW.
C2
E1
C1
B2
E2
pin #1 ^B1
SuperSOT^TM-6
Mark: .3S
Dot denotes pin #1
Value
160
180
6
600
0.7
150
- 55 ~ 150
180
Units
V
V
V
mA
W
°C
°C
°C/W
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BV_CEO
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics
I_C = 1mA
160
I_C = 10µA
180
I_E = 10µA
6
V_CB = 120V
V_CB = 120V, T = 100°C
V_EB = 4V
V
V
V
50 nA
50 µA
50 nA
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE = 5V, I_C = 1mA
V_CE = 5V, I_C = 10mA
V_CE = 5V, I_C = 50mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
80
80
250
30
0.15 V
0.2
1
V
1
TYPICAL
C_ob
Output Capacitance
V_CB = 10V, f = 1MHz
C_ib
Input Capacitance
V_CB = 0.5V, f = 1MHz
f_T
Current gain Bandwidth Product
V_CE = 10V, I_C = 10mA
f = 100MHz
6
pF
20 pF
100
300 MHz
NF
Noise Figure
h_FE
Small Signal Current Gain
V_CE = 5V, I_C = 200µA
f = 1MHz, R_S = 2kΩ, B = 200Hz
V_CE = 10V, I_C = 1mA
50
f = 1KHz
8
dB
250
©2004 Fairchild Semiconductor Corporation
Rev. A1, August 2004