FMB3946 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

FMB3946
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E1
C1
B2
E2
B1
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Package: SuperSOT-6
Device Marking: .002
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23
(NPN) and Process 66 (PNP).
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Value
40
40
5
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
P_D
R_θJA
Characteristics
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
700
5.6
180
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
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