FMB1020 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

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FMB1020
Package: SuperSOT-6
Device Marking: .004
Note: The " . " (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This dual complementary device was designed for use as a general purpose amplifier applications at
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
45
60
6
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
P_D
R_θJA
Characteristics
Total Device Dissipation, total
per side
Thermal Resistance, Junction to Ambient, total
Max
Units
700
mW
350
180
°C/W
© 1998 Fairchild Semiconductor Corporation
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