FLLD261 Datasheet, PDF (1/5 Pages) Zetex Semiconductors – SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR

FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .200 V (MIN) @ IR = 5 uA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
Operating Junction Temperature
-55 to +150 Degrees C
-55 to +150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
Derating Factor per Degree C
350 mW
2.8 mW
VOLTAGES & CURRENTS
WIV Working Inverse Voltage
IO
Average Rectified Current
IF
DC Forward Current
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse width = 1 second
Pulse width = 1 microsec
100 V
250 mA
600 mA
700 mA
1.0 A
3.0 A
PACKAGE
TO-236AB (Low)
3
P8A
1
2
CONNECTION DIAGRAMS
3
1
2
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
CHARACTERISTICS
MIN MAX UNITS TEST CONDITIONS
BV
Breakdown Voltage
200
V
IR = 5.0 uA
IR
Reverse Voltage Leakage Current
VF
Forward Voltage
5.0
nA
VR = 100 V
5.0
uA
VR = 100 V TA = 150 Deg C
1.40
V
IF = 200 mA
CT Diode Capacitance
TRR Reverse Recovery Time
4.0
pF
VR = 1.0 V f = 1.0 MHZ
400
ns
IF = IR = 50 to 400 mA
IRR = 10% IR RL = 100 ohms
TFR Forward Recovery Time
10
ns
IF = 10 mA
VFM Peak Forward Voltage
0.9
V
Typ
IF = 10 mA
Rise Time = 5 ns +/-20%
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.