FJPF9020 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Darlington Transistor

FJPF9020
Monolithic Construction With Built In Base-Emitter
Shunt Resistors
• High Collector-Base Breakdown Voltage : BV_CBO = -550V
• High DC Current Gain : h_FE = 550 @ V_CE = -4V, I_C = -1A (Typ.)
• Industrial Use
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
- 550
V
- 550
V
-6
V
-2
A
-4
A
15
W
150
°C
- 55 ~ 150
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = - 100uA, I_E = 0
I_C = - 500uA, I_B = 0
I_E = - 200mA, I_C = 0
V_CE = - 550V, I_E = 0
V_EB = - 6V, I_C = 0
V_CE = - 4V, I_C = - 1A
I_C = - 1A, I_B = - 20mA
I_C = - 1A, I_B = - 20mA
1
TO-220F
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
R1 ≅ 600Ω
R2 ≅ 150Ω
R2
E
Min. Typ. Max. Units
- 550
V
- 550
V
-6
V
-100 µA
-10
-20
mA
400 550 700
-1.0 - 1.5 V
-1.5 - 2.0
V
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002