FJNS3214R Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

FJNS3214R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R₁ =4.7KΩ, R₂=47KΩ)
• Complement to FJNS4214R
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
V
50
V
10
V
100
mA
300
mW
150
°C
-55 ~ 150
°C
Equivalent Circuit
R1
B
R2
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
I_CBO
h_FE
V_CE (sat)
f_T
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I_C=10µA, I_E=0
I_C=100µA, I_B=0
V_CB=40V, I_E=0
V_CE=5V, I_C=5mA
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
V_CB=10V, I_E=0
f=1.0MHz
V_I(off)
V_I(on)
R₁
R₁/R₂
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
V_CE=5V, I_C=100µA
V_CE=0.2V, I_C=5mA
Min.
50
50
68
0.5
3.2
0.09
Typ.
250
3.7
4.7
0.1
Max.
0.1
0.3
1.3
6.2
0.11
C
E
Units
V
V
µA
V
MHz
pF
V
V
KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002