FJL6820 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Triple Diffused Planar Silicon Transistor

FJL6820
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV_CBO = 1500V
• Low Saturation Voltage : V_CE(sat) = 3V (Max.)
• For Color Monitor
1
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
I_CP*
Collector Current (Pulse)
P_C
Collector Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
I_CES
Collector Cut-off Current
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
BV_CBO
Collector-Base Breakdown Voltage
BV_CEO
Collector-Emitter Breakdown Voltage
BV_EBO
Emitter-Base Breakdown Voltage
h_FE1
h_FE2
h_FE3
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
t_STG*
Storage Time
t_F*
Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
V_CB=1400V, R_BE=0
V_CB=800V, I_E=0
V_EB=4V, I_C=0
I_C=500µA, I_E=0
I_C=5mA, I_B=0
I_E=500µA, I_C=0
V_CE=5V, I_C=1A
V_CE=5V, I_C=8.5A
V_CE=5V, I_C=11A
I_C=11A, I_B=2.75A
I_C=11A, I_B=2.75A
V_CC=200V, I_C=10A, R_L=20Ω
I_B1=2.0A, I_B2= - 4.0A
Min.
1500
750
6
8
6
5.5
Typ.
0.15
Max.
1
10
1
10
8.5
3
1.5
3
0.2
Units
mA
µA
mA
V
V
V
V
V
µs
µs
Thermal Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Typ
R_θjC
Thermal Resistance, Junction to Case
Max
0.625
Units
°C/W
© 2001 Fairchild Semiconductor Corporation
Rev. A1, May 2001