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| FJL4315 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Audio Power Amplifier | |||
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FJL4315
Audio Power Amplifier
⢠High Current Capability : IC=15A
⢠High Power Dissipation
⢠Wide S.O.A
⢠Complement to FJL4215
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-264
1.Base 2.Collector 3.Emitter
Value
230
230
5
15
1.5
150
150
- 50 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
* DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
* Pulse Test : PW=20us
IC=5mA, IE=0
IC=10mA, RBE=â
IE=5mA, IC=0
VCB=230V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A, IB=0.8A
VCE=5V, IC=7A
VCE=5V, IC=1A
VCB=10V, f=1MHz
hFE Classification
Classification
hFE1
R
55 ~ 110
Min.
230
230
5
55
35
Typ.
60
0.4
1.0
30
200
Max.
5.0
5.0
160
Units
V
V
V
uA
uA
3.0
V
1.5
V
MHz
pF
O
80 ~ 160
©2003 Fairchild Semiconductor Corporation
Rev. B, March 2003
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