FGH40N120AN Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 1200V NPT IGBT

FGH40N120AN
1200V NPT IGBT
July 2008
IGBT^®
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.6 V @ I_C = 40A
• High input impedance
• RoHS complaint
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
Description
Employing NPT technology, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as induction heating (IH), motor
control, general purpose inverters and uninterruptible power
supplies (UPS).
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Parameter
V_CES
V_GES
I_C
I_CM(1)
P_D
SCWT
T_J
T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@T_C = 25°C
@T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
V_CE = 600V, V_GE = 15V, T_C = 125°C
Operating Junction Temperature
@T_C = 25°C
@T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGH40N120AN
1200
±25
64
40
160
417
167
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
µs
°C
°C
°C
Typ.
--
--
Max.
0.3
40
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FGH40N120AN Rev. A2
www.fairchildsemi.com