FGH20N60UFDTU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

FGH20N60UFD
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) =1.8 V @ I_C = 20 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
April 2013
General Description
Using novel field stop IGBT technology, Fairchild^®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_{FM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 100^oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
 20
40
20
60
20
10
60
165
66
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
o_C
o_C
o_C
©2008 Fairchild Semiconductor Corporation
1
FGH20N60UFD Rev. C0
www.fairchildsemi.com