FGB30N6S2DT Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth^TM Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125^oC
• Low Gate Charge . . . . . . . . . 23nC at V_GE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Package
Symbol
C
JEDEC STYLE TO-247
E
C
JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB
G
EC _G
C^G
G
E
E
Device Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV_CES Collector to Emitter Breakdown Voltage
600
V
I_C25
Collector Current Continuous, T_C = 25°C
45
A
I_C110
Collector Current Continuous, T_C = 110°C
20
A
I_CM
Collector Current Pulsed (Note 1)
108
A
V_GES
Gate to Emitter Voltage Continuous
±20
V
V_GEM Gate to Emitter Voltage Pulsed
±30
V
SSOA Switching Safe Operating Area at T_J = 150°C, Figure 2
60A at 600V
E_AS
Pulsed Avalanche Energy, I_CE = 12A, L = 2mH, V_DD = 50V
150
mJ
P_D
Power Dissipation Total T_C = 25°C
167
W
Power Dissipation Derating T_C > 25°C
1.33
W/°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
T_STG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A