FGA50N100BNTD2 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

February 2009
FGA50N100BNTD2
tm
1000V, 50A NPT-Trench IGBT CO-PAK
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.5 V @ I_C = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Applications
Micro-Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home
Appliance.
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for micro-wave,
Induction heating (I-H) Jar, induction heater, home appliance.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T_C = 100^oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
1
FGA50N100BNTD2 Rev. A
G
E
Ratings
1000
± 25
50
35
200
15
150
156
63
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
o_C
o_C
o_C
Typ.
-
-
-
Max.
0.8
1.2
40.0
Units
o_C/W
o_C/W
o_C/W
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