FFPF60SB60DS Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 4A, 600V STEALTHTM II Rectifier

FFPF60SB60DS
Features
• High Speed Switching, t_rr < 25ns @ I_F = 4A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
March 2008
STEALTH^TM II Rectifier
tm
4A, 600V STEALTH^TM II Rectifier
The FFPF60SB60DS is STEALTH^TM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
1 23
TO220F
1. Cathode 2. Anode(Cathode) 3. Anode
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ T_C = 100^oC
T_J, T_STG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
Package
FFPF60SB60DS FFPF60SB60DSTU
TO220F
Reel Size
-
Ratings
600
600
600
4
40
-65 to +150
Units
V
V
V
A
A
o_C
Ratings
8.7
Units
o_C/W
Tape Width
-
Quantity
50
©2008 Fairchild Semiconductor Corporation
1
FFPF60SB60DS Rev. A
www.fairchildsemi.com