FFPF10UP60STU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Ultrafast Recovery trr = 40 ns (@ IF = 1 A)

FFPF10UP60S
March 2004
tm
Features
• Ultrafast Recovery t_rr = 40 ns (@ I_F = 1 A)
• Max Forward Voltage, V_F = 2.2 V (@ T_C = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
10 A, 600 V, Ultrafast Diode
The FFPF10UP60S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use
as freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It is
specially suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
Applications
• General Purpose
• Switching Mode Power Supply
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits
12
TO-220F-2L
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T_C = 60°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
1. Cathode 2. Anode
Value
Unit
600
V
10
A
50
A
- 65 to +150
°C
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
4.5
Unit
°C/W
Electrical Characteristics T_C=25 °C unless otherwise noted
Symbol
Parameter
V_{F *}
I_{R *}
Maximum Instantaneous Forward Voltage
I_F = 10 A
I_F = 10 A
Maximum Instantaneous Reverse Current
@ rated V_R
t_rr
Reverse Recovery Time
I_rr
Reverse Recovery Current
Q_rr
Reverse Recovery Charge
(I_F =1 A, di/dt = 100 A/µs)
t_rr
Maximum Reverse Recovery Time
(I_F =10 A, di/dt = 200 A/µs)
W_AVL
Avalanche Energy (L = 40 mH)
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
Min.
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
34
1.0
17
58
-
Max.
2.2
2.0
100
500
40
1.5
30
-
-
Units
V
µA
ns
A
nC
ns
mJ
©2004 Fairchild Semiconductor Corporation
1
FFPF10UP60S Rev. A
www.fairchildsemi.com