FFPF08S60S Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Stealth 2 Rectifier

FFPF08S60S
Stealth 2 Rectifier
Features
• High Speed Switching ( Max. t_rr<30ns @ I_F=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
April 2007
tm
8A, 600V Stealth 2 Rectifier
The FFPF08S60S is stealth2 rectifier with soft recovery charac-
teristics (t_rr<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
T_J, T_STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ T_C = 95 °C
Operating Junction and Storage Temperature
Thermal Characteristics T_C = 25°C unless otherwise noted
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering _Information
Device Marking Device
F08S60S
FFPF08S60STU
Package
TO-220F-2L
Reel Size
-
Value
600
600
600
8
80
- 65 to +150
Max
3.4
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
FFPF08S60S Rev. A
www.fairchildsemi.com