FFP30S60S_12 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30A, 600V STEALTHTM II Rectifier

FFP30S60S
Features
• High Speed Switching, t_rr < 40ns @ I_F = 30A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
February 2012
STEALTH^TM II Rectifier
tm
30A, 600V STEALTH^TM II Rectifier
The FFP30S60S is STEALTH^TM II rectifier with soft recovery
charac-teristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Pin Assigments
TO-220-2L
1. Cathode 2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ T_C = 103^oC
T_J, T_STG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
Device
Package
F30S60S
FFP30S60STU
TO-220-2L
Reel Size
-
Ratings
600
600
600
30
300
-65 to +150
Units
V
V
V
A
A
o_C
Ratings
1.1
Units
o_C/W
Tape Width
-
Quantity
50
©2012 Fairchild Semiconductor Corporation
1
FFP30S60S Rev.C0
www.fairchildsemi.com