FFH75H60S Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Hyperfast Recovery Power Rectifier

FFH75H60S
Hyperfast Recovery Power Rectifier
September 2012
tm
Features
• High Speed Switching ( t_rr=40ns(Typ.) @ I_F=75A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( V_F=1.8V(Typ.) @ I_F=75A )
Applications
• General Purpose
• Switching Mode Power Supply
• Power switching circuits
75A, 600V Hyperfast Rectifier
The FFH75H60S is a hyperfast diode with soft recovery
characteristics (trr< 40ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated ion-
implanted epitaxial planar construction.This device is
intended for use as a freewheeling/clamping diode and
rectifier in a variety of switching power supplies and
other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits, thus
reducing powerloss in the switching transistors.
Pin Assignments
TO-247-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings
T_C = 25°C unless otherwise noted
Symbol
Parameter
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ T_C = 105°C
T_J, T_STG
Operating Junction and Storage Temperature
Thermal Characteristics
T_C = 25°C unless otherwise noted
Symbol
Parameter
R_θJC
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Device Marking
FFH75H60S
Device
FFH75H60S
Package
TO-247-2L
Reel Size
-
Ratings
600
600
600
75
750
- 65 to +150
Max
0.4
Tape Width
-
Units
V
V
V
A
A
°C
Units
°C/W
Quantity
30
©2012 Fairchild Semiconductor Corporation
1
FFH75H60S Rev. C1
www.fairchildsemi.com