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FFB5551 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual-Chip NPN General Purpose Amplifier
FFB5551
Dual-Chip NPN General Purpose Amplifier
• This device is deisgned for general purpose high voltage amplifiers.
• E1 is Pin 1.
E2
B2
C1
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
160
180
6.0
200
- 55 ~ 150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
C2
B1
E1 SC70-6
Mark: .P1
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics *
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
VEB = 4.0V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 5.0V, IC = 1.0mA
VCE = 5.0V, IC = 10mA
VCE = 5.0V, IC = 50mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
fT
Current gain Bandwidth Product
VCE = 10V, IC = 10mA
f = 100MHz
Cobo
Output Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCB = 10V, IE = 0, f = 1.0MHz
Min. Max. Units
160
V
180
V
6.0
V
50
nA
50
µA
50
nA
80
80
250
30
0.15
V
0.20
1.0
V
1.0
100
300 MHz
6.0
pF
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
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