FFB3946 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN & PNP General Purpose Amplifier

FFB3946
E2
B2
C1
SC70-6
Mark: .AB
Dot denotes pin #1
C2
B1
pin #1 E1
FMB3946
TRANSISTOR TYPE
C1 B1 E1 NPN
C2 B2 E2 PNP
C2
E1
C1
SuperSOT-6
Mark: .002
Dot denotes pin #1
B2
E2
pin #1 B1
NPN & PNP General Purpose Amplifier
This complementary device is designed for use as a general purpose
amplifier and switch The useful dynamic range extends to 100 mA as a
switch and 100 MHz as an amplifier. Sourced from Process 23 and 66.
See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
40
5.0
V
V
4
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
FFB3946
300
2.4
415
FMB3946
700
5.6
180
Units
mW
mW/°C
°C/W
 1999 Fairchild Semiconductor Corporation