FFB3906 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP Multi-Chip General Purpose Amplifier

FFB3906
FMB3906
MMPQ3906
E2
B2
C1
SC70-6
Mark: .2A
C2
B1
pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT-6
Mark: .2A
E4B4
B3
E3
B2
E2
B1
E1
C4C4
C3
C3
SOIC-16
C2
C2
C1
pin #1 ^C1
Mark: MMPQ3906
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
40
V_CBO
Collector-Base Voltage
40
V_EBO
Emitter-Base Voltage
5.0
I_C
Collector Current - Continuous
200
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
FFB3904
PD
Total Device Dissipation
300
Derate above 25°C
2.4
RθJA
Thermal Resistance, Junction to Ambient
415
Effective 4 Die
Each Die
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
 1998 Fairchild Semiconductor Corporation