FFB3904_1 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN Multi-Chip General Purpose Amplifier

FFB3904
FMB3904
MMPQ3904
E2
B2
C1
SC70-6
Mark: .1A
C2
B1
pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT-6
Mark: .1A
Dot denotes pin #1
E4B4
B3
E3
B2
E2
B1
E1
C4
C4
C3
C3
C2C2
C1
SOIC-16 pin #1 ^C1
Mark: MMPQ3904
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
40
V
60
V
4
V_EBO
I_C
T_J, T_stg
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
6.0
V
200
mA
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3904
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
 1998 Fairchild Semiconductor Corporation