FFB3904 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Discrete POWER & Signal
Technologies
FFB3904
FMB3904
MMPQ3904
E2
B2
C1
C2
B1
pin #1 E1
SC70-6
Mark: .1A
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .1A
B4
E4
B3
E3
B2
E2
B1
E1
C4
C4
C3
C3
C2
C2
C1
SOIC-16 ^C1
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
40
V_CBO
Collector-Base Voltage
60
V_EBO
Emitter-Base Voltage
6.0
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
FFB3904
PD
Total Device Dissipation
300
Derate above 25°C
2.4
RθJA
Thermal Resistance, Junction to Ambient
415
Effective 4 Die
Each Die
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation