FFB2227A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN & PNP General Purpose Amplifier

FFB2227A
E2
B2
C1
SC70-6
Mark: .AA
Dot denotes pin #1
C2
B1
pin #1 E1
FMB2227A
TRANSISTOR TYPE
C1 B1 E1 NPN
C2 B2 E2 PNP
C2
E1
C1
SuperSOT-6
Mark: .001
Dot denotes pin #1
B2
E2
pin #1 B1
NPN & PNP General Purpose Amplifier
This complementary device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced from Process
19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
60
V
VEBO
IC
Emitter-Base Voltage
Collector Current - Continuous
5.0
V
500
mA
4
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max
FFB2227A
300
2.4
415
FMB2227A
700
5.6
180
Units
mW
mW/°C
°C/W
 1998 Fairchild Semiconductor Corporation